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| MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE A B R - M4 THD (2 TYP.) N Q - DIA. (4 TYP.) E J H A B H G E C P - M8 THD (2 TYP.) G M F L D K M E C Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features:eatures: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Auxilliary Inverter for Traction UPS Welding Power Supplies E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.49 3.660.01 Millimeters 114.0 93.00.25 Dimensions J K L M N P Q R Inches 0.71 0.57 0.43 0.41 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 18.0 14.5 11.0 10.5 9.0 M8 Dia. 6.5 M4 1.50+0.04/-0.02 38.0+1.0/-0.5 1.26 32.0 1.18+0.04/-0.02 30.0+1.0/-0.5 1.02 1.0 0.83 26.0 25.5 21.0 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-34H is a 1700V (VCES), 400 Ampere Single IGBT Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 34 Sep.1998 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM600HU-12H -40 to 150 -40 to 125 1700 20 400 800* 400 800* 4100 8.83~10.8 1.96~2.94 0.98~1.47 980 4000 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES V GE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 750V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.7 - 2900 - Max. 4 0.5 7.5 3.7** -* - 3.4 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = -800A/s IE = 400A, diE/dt = -800A/s VCC = 750V, IC = 400A, VGE1 = VGE2 = 15V, RG = 10 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.0 Max. 85 20 15 900 1500 1500 800 400 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.030 0.060 0.023 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 Tj = 25C VGE = 20V IC, (AMPERES) 15 12 800 VCE = 10V Tj = 25C Tj = 125C 5 VGE = 15V Tj = 25C Tj = 125C 640 640 11 IC, (AMPERES) 4 VCE(sat), (VOLTS) 10 480 480 3 320 9 8 0 0 2 4 6 8 10 VCE, (VOLTS) 320 2 160 160 1 0 0 4 8 12 16 20 VGE, (VOLTS) 0 0 160 320 480 640 800 IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 103 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 VCE(sat), (VOLTS) IC = 800A IE, (AMPERES) 102 Cies 6 IC = 400A 102 4 101 VGE = 0V Coes Cres 2 IC = 160A 0 0 4 8 12 16 20 VGE, (VOLTS) 101 0 1 2 VEC, (VOLTS) 3 4 100 10-1 100 VCE, (VOLTS) 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 750V VGE = 15V RG = 10 Tj = 125C td(off) 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 16 VCC = 500V VCC = 750V SWITCHING TIME, (ns) trr 12 103 tf t d(on) 102 Irr 102 8 tr di/dt = -800A/sec Tj = 25C 4 102 101 102 COLLECTOR CURRENT IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE, QG, (C) Sep.1998 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.03C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.06C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
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